| 摘要 |
PROBLEM TO BE SOLVED: To surely form electric connection between a metal thin-film resistor and a metal wiring pattern while preventing the upper face of the metal thin-film resistor from being irradiated with oxide plasma, in a manufacturing method for a semiconductor device provided with the metal thin-film resistor. SOLUTION: A wiring pattern 11 is formed on an underlayer insulating film 5. An insulating film 19 is formed on the underlayer insulating film 5. A connecting hole 21 is formed to the insulating film 19 corresponding to an area where both ends of the metal thin-film resistor are to be formed and the wiring pattern 11. A metal thin-film 37 is formed on the insulating film 19 including the inside of the connecting hole 21. A protection film 43 is formed on the metal thin-film 37. A resist pattern 39 is formed on the protection film 43 so that the metal thin-film 37 and the protection film 43 remain even in a forming area of the connecting hole 21. The protection film 43 and the metal thin-film 37 are patterned by making the resist pattern 39 as a mask with an anisotropic etching technique. A laminated pattern composed of a protection film pattern 41 and the metal thin-film resistor 23 is formed. After that, the resist pattern 39 is removed. COPYRIGHT: (C)2006,JPO&NCIPI
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