发明名称 |
Method of eliminating galvanic corrosion in copper CMP |
摘要 |
A method for cleaning a semiconductor wafer surface comprises sweeping the semiconductor wafer surface and applying a first cleaning solution having a first pH, stop applying the first cleaning solution and applying a first rinsing solution to the semiconductor wafer surface, the first rinsing solution having a second pH that is significantly different from the first pH, sweeping the semiconductor wafer surface and applying a second cleaning solution having a third pH, and stop applying the second cleaning solution and applying a second rinsing solution to the semiconductor wafer surface, the second rinsing solution having a fourth pH that is significantly different from the third pH.
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申请公布号 |
US2006112971(A1) |
申请公布日期 |
2006.06.01 |
申请号 |
US20040999277 |
申请日期 |
2004.11.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KUO HAN-HSIN;LU HSIN-HSIEN;CHEN YING-HO;JANG SYUN-MING |
分类号 |
C23G1/00;B08B3/00;B08B7/00 |
主分类号 |
C23G1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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