| 摘要 |
An Al x Ga y In 1-x-y N substrate in which particles having a grain size of at least 0.2 µm on a surface of the Al x Ga y In 1-x-y N substrate are at most 20 in number when a diameter of the Al x Ga y In 1-x-y N substrate is two inches, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Further, an Al x Ga y In 1-x-y N substrate (51) in which, in a photoelectron spectrum of a surface of the Al x Ga y In 1-x-y N substrate (51) by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C 1s electrons and a peak area of N 1s electrons (C 1s electron peak area / N 1s electron peak area) is at most 3, and a cleaning method with which the Al x Ga y In 1-x-y N substrate can be obtained are provided. Still further, an AlN substrate (52) in which, in a photoelectron spectrum of a surface of the AlN substrate (52) by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al 2s electrons and a peak area of N 1s electrons (Al 2s electron peak area / N 1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided. |
