| 摘要 |
<p>The invention relates to a process for making a semiconducting structure composed of a surface layer (2), at least one buried layer (4) and a support, comprising: - a first step to make a first layer (44) made of a first material on a first support, and at least one area (26, 28) in this first layer made of a second material with an etching rate greater than the etching rate of the first material, - a second step for the formation of the surface layer (2), by assembly of the structure on a second support, and thinning of at least one of the two supports .</p> |
