| 摘要 |
<p>The present invention relates to a method for forming an inductor in a semiconductor device. The method comprises the steps of forming a first metal layer on a semiconductor substrate in which a predetermined structure is formed, and then patterning the first metal layer so that a predetermined region of the semiconductor substrate is exposed; forming a first copper layer on the entire resulting surface and then polishing the first copper layer; forming a second metal layer on the resulting surface including the polished first copper layer and then patterning the second metal layer so that predetermined regions of the first metal layer and the first copper layer are exposed; forming a second copper layer on the formed resulting surface; and polishing the resulting surface and stripping the first and second metal layers.</p> |
