发明名称 Encapsulation of post-etch halogenic residue
摘要 A method of etching is provided that includes transferring a substrate into a vacuum environment, etching a material layer on the substrate and depositing a polymeric film encapsulating etch residues on the substrate without removing the substrate from the vacuum environment.
申请公布号 US2006032833(A1) 申请公布日期 2006.02.16
申请号 US20040915519 申请日期 2004.08.10
申请人 APPLIED MATERIALS, INC. 发明人 KAWAGUCHI MARK N.;LILL THORSTEN B.;KHAN ANISUL H.
分类号 B44C1/22 主分类号 B44C1/22
代理机构 代理人
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