发明名称 Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing
摘要 <p>Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer, forming an electrically insulating structure on exposed regions of the first electrically insulating layer, forming a trench in the hard mask so that a part of the surface of the semiconductor layer is exposed, thinning the semiconductor layer on an exposed part of the surface, forming a second electrically insulating layer on an exposed region of the semiconductor layer and forming electrically conducting material on the second electrically insulating layer. An independent claim is also included for: a layer arrangement produced using the above process.</p>
申请公布号 DE102004031119(A1) 申请公布日期 2006.01.19
申请号 DE20041031119 申请日期 2004.06.28
申请人 INFINEON TECHNOLOGIES AG 发明人 ILICALI, GUERKAN;DREESKORNFELD, LARS;SCHROETER, RAINER;HARTWICH, JESSICA
分类号 H01L21/84;H01L27/12 主分类号 H01L21/84
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