发明名称 |
Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer and further processing |
摘要 |
<p>Production of a layer arrangement comprises structuring a semiconductor layer on a first electrically insulating layer using a hard mask formed on part of the semiconductor layer, forming an electrically insulating structure on exposed regions of the first electrically insulating layer, forming a trench in the hard mask so that a part of the surface of the semiconductor layer is exposed, thinning the semiconductor layer on an exposed part of the surface, forming a second electrically insulating layer on an exposed region of the semiconductor layer and forming electrically conducting material on the second electrically insulating layer. An independent claim is also included for: a layer arrangement produced using the above process.</p> |
申请公布号 |
DE102004031119(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
DE20041031119 |
申请日期 |
2004.06.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ILICALI, GUERKAN;DREESKORNFELD, LARS;SCHROETER, RAINER;HARTWICH, JESSICA |
分类号 |
H01L21/84;H01L27/12 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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