发明名称 Doping method, doping apparatus, and control system for doping apparatus
摘要 A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control system for controlling a doping amount, and a doping apparatus having a control system are provided. An ion current value of a specific ion in an ion beam is measured. There is an ion detector that measures an ion current value of a specific ion in an ion beam and enters the obtained monitor signal into a control means. Set data for setting a predetermined dose amount is entered into the control means, convert data for obtaining an actual dose amount from the monitor signal is entered into the control means by a memory means. The control means performs data processing on the basis of the input monitor signal and the convert data, a control signal for obtaining the predetermined dose amount is entered from the control means to the dose amount control system to dope the controlled ion beam into the target material.
申请公布号 US2006005768(A1) 申请公布日期 2006.01.12
申请号 US20050222765 申请日期 2005.09.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA OSAMU
分类号 C23C16/00;H01J37/05;H01J37/317;H01L21/00;H01L21/265 主分类号 C23C16/00
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