| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor thin-film transistor display panel, having high mass productivity and also capable of ensuring transistor properties, and to provide its manufacturing method. SOLUTION: First, a gate line is formed on an insulating substrate and a gate insulating layer that covers the gate line is formed. Next, a data line, having a source electrode and a drain electrode are formed on the gate insulating layer and an organic semiconductor layer and an insulating layer are laminated sequentially. After a positive photosensitive film pattern is formed at the upper part of the gate electrode of the insulating layer, an organic semiconductor and an insulator are formed at the upper part of the gate electrode by etching the organic semiconductor layer and the insulating layer, using the photosensitive film pattern as an etching mask. After this, a protective film having a contact hole to expose the drain electrode is formed on the organic semiconductor, the insulator, the data line, and the drain electrode and a pixel electrode to be linked to the drain electrode through the contact hole is formed. COPYRIGHT: (C)2006,JPO&NCIPI |
