发明名称 Method for fabricating dielectric mixed layers and capacitive element and use thereof
摘要 The present invention provides a method for fabricating a capacitive element ( 100 ), a substrate ( 101 ) being provided as a first electrode layer of the capacitive element ( 100 ), the substrate ( 101 ) provided as an electrode layer is conditioned, a dielectric layer ( 102 ) is deposited on the conditioned substrate ( 101 ) and a second electrode layer ( 104 ) is applied on the layer stack produced, the layer stack being modified by a heat treatment in such a way that the dielectric layer ( 102 ) deposited on the conditioned substrate ( 101 ) forms a dielectric mixed layer ( 105 ) with a reaction layer ( 103 ) deposited on the dielectric layer ( 102 ), which dielectric mixed layer has an increased dielectric constant (k) or an increased thermal stability.
申请公布号 US2005258510(A1) 申请公布日期 2005.11.24
申请号 US20050125654 申请日期 2005.05.10
申请人 GUTSCHE MARTIN;SEIDL HARALD 发明人 GUTSCHE MARTIN;SEIDL HARALD
分类号 H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L27/08;H01L29/76;(IPC1-7):H01L29/76;H01L21/824 主分类号 H01L21/02
代理机构 代理人
主权项
地址