发明名称 |
Method for fabricating dielectric mixed layers and capacitive element and use thereof |
摘要 |
The present invention provides a method for fabricating a capacitive element ( 100 ), a substrate ( 101 ) being provided as a first electrode layer of the capacitive element ( 100 ), the substrate ( 101 ) provided as an electrode layer is conditioned, a dielectric layer ( 102 ) is deposited on the conditioned substrate ( 101 ) and a second electrode layer ( 104 ) is applied on the layer stack produced, the layer stack being modified by a heat treatment in such a way that the dielectric layer ( 102 ) deposited on the conditioned substrate ( 101 ) forms a dielectric mixed layer ( 105 ) with a reaction layer ( 103 ) deposited on the dielectric layer ( 102 ), which dielectric mixed layer has an increased dielectric constant (k) or an increased thermal stability.
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申请公布号 |
US2005258510(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20050125654 |
申请日期 |
2005.05.10 |
申请人 |
GUTSCHE MARTIN;SEIDL HARALD |
发明人 |
GUTSCHE MARTIN;SEIDL HARALD |
分类号 |
H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L27/08;H01L29/76;(IPC1-7):H01L29/76;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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