| 摘要 |
PROBLEM TO BE SOLVED: To provide a power device which has no deterioration in interconnections, even if a large current is caused to flow continuously, and hence has a long service life, in view of the problem wherein an SiC power device having a structure such as an n-type SiC layer, a p-type SiC layer, an n<SP>+</SP>-type region, and a p<SP>+</SP>-type region are formed on an SiC substrate should be tolerable to a large current flow, but one which uses an aluminum interconnections may deteriorate in the interconnections due to the disconnections thereof by electromigration, when a large current is continuously caused to flow. SOLUTION: The SiC semiconductor device has a structure with the n-type SiC layer, the p-type SiC layer, the n<SP>+</SP>-type region, and the p<SP>+</SP>-type region being formed on the SiC substrate. Further, the device has a drain electrode, a gate electrode, and a source electrode and an interconnection connected to these electrodes, and all or almost all the electrodes and the interconnection are formed of copper. COPYRIGHT: (C)2006,JPO&NCIPI |
