发明名称 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
摘要 |
The present invention provides a bipolar transistor having a raised extrinsic base silicide and an emitter contact border that are self-aligned. The bipolar transistor of the present invention exhibit reduced parasitics as compared with bipolar transistors that do not include a self-aligned silicide and a self-aligned emitter contact border. The present invention also is related to methods of fabricating the inventive bipolar transistor structure. In the methods of the present invention, a block emitter polysilicon region replaces a conventional T-shaped emitter polysilicon.
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申请公布号 |
US2005242373(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050175094 |
申请日期 |
2005.07.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AHLGREN DAVID C.;FREEMAN GREGORY G.;KHATER MARWAN H.;VOLANT RICHARD P. |
分类号 |
H01L21/28;H01L21/331;H01L21/8249;H01L29/08;H01L29/417;H01L29/423;H01L29/732;H01L29/737;(IPC1-7):H01L31/072 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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