发明名称 STRUCTURE OF FERROELECTRIC MEMORY ELEMENT AND NONDESTRUCTIVE READOUT METHOD
摘要 PROBLEM TO BE SOLVED: To solve the problem in a ferroelectric memory element that, although many nondestructive readout methods have been studied, each has a problem that the difference between "1" and "0" is small, a problem in the process reliability, and so forth, and they have not been solved, and to provide a nondestructive readout method suitable for a simple matrix structure memory element. SOLUTION: The nondestructive readout type ferroelectric memory includes a step for writing 1 bit information in a pair of a recording cell and a reference cell disposed in series in the ferroelectric memory element and a step for nondestructively reading out an output signal which is outputted by resonating a response when a pulse is applied to the 1 bit information written in the pair of the recording cell and the reference cell at a resonant frequency by a resonance circuit provided to the readout side. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005285151(A) 申请公布日期 2005.10.13
申请号 JP20040092718 申请日期 2004.03.26
申请人 SEIKO EPSON CORP 发明人 KIJIMA TAKESHI;HAMADA YASUAKI
分类号 G11C7/00;G11C11/22;H01L21/8246;H01L27/10;H01L27/105;(IPC1-7):G11C11/22 主分类号 G11C7/00
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