| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor laser that can correct a horizontal deviation angle of a far field pattern (FFP) of semiconductor laser's emission light and realize a desirable emission light property when the horizontal deviation angle arises in the FFP of the semiconductor laser's emission light by making up semiconductor laser, e.g., with an off substrate in semiconductor laser manufacture. SOLUTION: In manufacture of semiconductor laser device composed of a semiconductor laser chip using the off substrate, a property measurement process wherein a measured valueαof an inclination of a semiconductor laser chip against the reference level and a measured valueΔθ'' of a horizontal deviation angle therefor of a far field pattern (FFP) of light emitted from a semiconductor light emitting device are measured, and a selection and attachment process wherein, based on the property measurement process that finds a relationship property between the two and its regularity and the relationship and regularity obtained through the property measurement step, an off-set angleβof the semiconductor chip to a mount object that regards theΔθ'' as a desired value is selected and the semiconductor chip is attached outo the mount object, are provided. COPYRIGHT: (C)2005,JPO&NCIPI
|
