| 摘要 |
PROBLEM TO BE SOLVED: To deposit a tungsten on a semiconductor substrate comprising an inductive material of low-K at a low temperature by heating the semiconductor substrate to a specified temperature range, introducing an initial gas onto a first deposition station to form a silicon amorphous monolayer, and introducing a nucleus forming gas. SOLUTION: A semiconductor substrate, housed in a first deposition station on a pedestal in a chamber, is heated to the temperature range of 360-390 deg.C, and an initial gas containing silane is introduced to the semiconductor substrate in the first deposition station, forming an amorphous monolayer of silicon. Furthermore, argon is mode to continuously flow to form a first layer of seven layers. The first three layers are formed at a deposition station 14a. Then injection of the initial gas is stopped, and the nucleus formation gas is introduced into a first deposition chamber to form a silane reducing tungsten layer. The nucleus forming gas includes a silane gas flow and tungsten hexafluoride gas flow.
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