发明名称 |
NEW FERRIMAGNETIC ALTERNATIVE MULTILAYER FILM COMPLEX, ITS PRODUCTION PROCESS AND THREE-DIMENSIONAL INTEGRATED CIRCUIT EMPLOYING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide an alternative multilayer film complex having ferrimagnetism in which a spinel type ferrite epitaxial growth layer and an epitaxial growth layer of titanium or titanium alloy are formed in tight contact on a single crystal substrate, and to provide a three-dimensional integrated circuit incorporating it. SOLUTION: In the ferrimagnetic alternative multilayer film complex, a spinel type ferrite epitaxial growth layer and an epitaxial growth layer of titanium or titanium alloy are formed alternately in three or more layers on a single crystal substrate directly or through a buffer layer of magnesium oxide epitaxial layer. The three-dimensional integrated circuit employs the ferrimagnetic alternative multilayer film complex as a magnetic device. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005251840(A) |
申请公布日期 |
2005.09.15 |
申请号 |
JP20040057353 |
申请日期 |
2004.03.02 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY |
发明人 |
KADO TETSUO |
分类号 |
H01F10/20;H01F10/28;H01F10/30;H01F10/32;H01F41/30;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):H01L43/08 |
主分类号 |
H01F10/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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