发明名称 NEW FERRIMAGNETIC ALTERNATIVE MULTILAYER FILM COMPLEX, ITS PRODUCTION PROCESS AND THREE-DIMENSIONAL INTEGRATED CIRCUIT EMPLOYING IT
摘要 PROBLEM TO BE SOLVED: To provide an alternative multilayer film complex having ferrimagnetism in which a spinel type ferrite epitaxial growth layer and an epitaxial growth layer of titanium or titanium alloy are formed in tight contact on a single crystal substrate, and to provide a three-dimensional integrated circuit incorporating it. SOLUTION: In the ferrimagnetic alternative multilayer film complex, a spinel type ferrite epitaxial growth layer and an epitaxial growth layer of titanium or titanium alloy are formed alternately in three or more layers on a single crystal substrate directly or through a buffer layer of magnesium oxide epitaxial layer. The three-dimensional integrated circuit employs the ferrimagnetic alternative multilayer film complex as a magnetic device. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005251840(A) 申请公布日期 2005.09.15
申请号 JP20040057353 申请日期 2004.03.02
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 KADO TETSUO
分类号 H01F10/20;H01F10/28;H01F10/30;H01F10/32;H01F41/30;H01L43/08;H01L43/10;H01L43/12;(IPC1-7):H01L43/08 主分类号 H01F10/20
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