发明名称 Semiconductor memory device having self-precharge function
摘要 An XOR gate receives an input from a pair of read data lines to output a self-precharge signal when there is an increased potential difference between the paired read data lines. Thus, immediately after the increased potential difference between the paired read data lines occurs upon issuance of a read command, a precharge operation is autonomically performed. Therefore, no external precharge command is necessary when the read command is issued and thus a higher-speed operation is easily achieved.
申请公布号 US6930950(B2) 申请公布日期 2005.08.16
申请号 US20030706964 申请日期 2003.11.14
申请人 RENESAS TECHNOLOGY CORP. 发明人 KINOSHITA MITSUYA;NODA HIDEYUKI
分类号 G11C11/407;G11C7/12;G11C11/409;G11C11/4094;(IPC1-7):G11C8/00 主分类号 G11C11/407
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