Cleaning CVD chambers following deposition of porogen-containing materials

摘要

The present invention is a process for cleaning equipment surfaces in a semiconductor material processing chamber after deposition of a porous film containing a porogen, comprising; contacting the equipment surfaces with a proton donor containing atmosphere to react with the porogen deposited on the equipment surfaces; contacting the equipment surfaces with a fluorine donor containing atmosphere to react with the film deposited on the equipment surfaces.