| 摘要 |
PROBLEM TO BE SOLVED: To enable a reliable interposer capacitor having a dielectric constant to be manufactured easily and at low costs. SOLUTION: A sacrifice layer 19 is formed on an Si substrate 17 which is formed with an oxide layer 18 and has a smooth surface, a dielectric layer 11 is formed on the sacrifice layer 19, and a first opposite electrode 10 and an Au film 9a are formed on the dielectric layer 11. A close contact layer 7, a plating layer 8, Au film 9b, and an Si film 9c are sequentially formed on the surface of a multilayer ceramic substrate 2 which is formed with a plurality of vias 4a to 4c. The Si film 9c and Au film 9a are bonded by heat treatment. The Si substrate 17 is separated from the dielectric layer 11 via the sacrifice layer 19, and then a second opposite electrode is formed on the dielectric layer 11. A power supply via 4a is electrically connected to the first opposite electrode 10, and a ground via 4c and the second opposite electrode are electrically connected. COPYRIGHT: (C)2005,JPO&NCIPI
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