| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that ensures high-level output and improves beam properties. SOLUTION: This cutting equipment is characterized by a stripe ridge 20a extending from a laminate structure surface to an intermediate position in a p-side clad layer 18, and is fabricated in a way that the p-side electrode 52 swings vertically against the guided wave, and changes its width periodically and the skirt 20b of the above ridge 20a also swings vertically against the guided wave. Concretely, the thickness of the p-side clad layer 18 is changed periodically and the side of the ridge 20a and the surface of the skirt 20b are covered with a protection layer 21. In this way, the index guide area (gain guide area) established via the p-side electrode 52 matches that of the skirt 20b and they combine to effectively confine the carriers and light in the internal active region of the active layer 16, resulting in the stabilized transverse mode and improved beam property. COPYRIGHT: (C)2005,JPO&NCIPI
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