发明名称 FLASH MEMORY, MAPPING CONTROL APPARATUS AND METHOD FOR FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a mapping algorithm for efficient access to a flash memory, wherein block state information that is changed, through logical operations required by a processor is written in the flash memory, according to a predetermined state transition algorithm and the changed information is referred to upon read/write operations in a flash memory, a mapping control apparatus and a method for the flash memory. SOLUTION: The mapping control apparatus for the flash memory includes the flash memory, having regions divided on block as units and containing the block state information indicating the state of each block, each block including the predetermined number of sectors; and a processor for deciding the sector, on which a predetermined logical operation is to be performed, based on the block state information and updating the block state information according to the predetermined state transition algorithm, when logical operation is required for the flash memory. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005174279(A) 申请公布日期 2005.06.30
申请号 JP20040106982 申请日期 2004.03.31
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 CHUNG TAE-SUN;PARK HYUNG-SEOK;JUNG MYUNG-JIN
分类号 G06F12/16;G06F12/00;G06F12/02;(IPC1-7):G06F12/02 主分类号 G06F12/16
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