Non-volatile memory with phase-change recording layer

摘要

A non-volatile memory, which comprises an insulating substrate ( 11 ) that has a first electrode ( 18 ) that extends through the substrate from the front surface to the rear surface thereof; a second electrode ( 13 ) that is formed on one side of the insulating substrate ( 11 ); and a recording layer ( 12 ) that is clamped between the first electrode ( 18 ) and the second electrode ( 13 ) and whose resistance value varies when an electric pulse is applied across the first electrode ( 18 ) and the second electrode ( 13 ); wherein the insulating substrate ( 11 ) has a layered structure composed of an organic dielectric thin film ( 112 ) and an inorganic dielectric layer ( 111 ) that is thinner than the organic dielectric thin film ( 112 ); with the recording layer ( 12 ) being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.