| 摘要 |
A trapezoid-like resistive multilayer is formed on a substrate with both side faces as continuous inclined faces. The bias underlayer is formed at a level halfway of each inclined face of the resistive multilayer, and the entire surface of an underlayer of a bias layer is in contact with the bias underlayer. The bias layer is formed on the bias underlayer by being lifted up at a level of a free magnetic layer. The magnetic sensing element comprises a gap layer an antiferromagnetic layer, a pinned magnetic layer and an amorphous conductive layer is formed in each side area of the antiferromagnetic layer, the bias underlayer and bias layer are formed on the amorphous conductive layer from the bottom in this order, and the bias layer is formed as a underlayer of each side area of the antiferromagnetic layer, amorphous conductive layer and bias layer.
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