| 摘要 |
PURPOSE: A cell array block of non-volatile FeRAM is provided to equalize the cell data quality by setting different sizes of sensing load and setting different sizes of capacitors on each memory cell array. CONSTITUTION: A cell array block of non-volatile FeRAM comprises a cell array, a main bit line pull-up control part, a main bit line sensing load part, a column selecting switching part. And the main bit line sensing load part comprises plural PMOS transistors(PL1-PLn) for applying different sizes of sensing load(LOAD_SIZE(0)-LOAD_SIZE(n)) to each main bit line(MLB) one-to-one corresponding to each sub cell array.
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