发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A semiconductor device includes a metal wiring provided on a semiconductor substrate. The device further includes an anti-metal diffusion film formed on the metal wiring, a buffer layer which is formed on the anti-metal diffusion film and includes at least a silicon-methyl radical bond and a silicon-oxygen bond, and a low-dielectric constant film layer which is formed on the buffer layer and includes at least the silicon-methyl radical bond and the silicon-oxygen bond, wherein the silicon-methyl radical bonding density of the buffer layer is less than the silicon-methyl radical bonding density of the low-dielectric constant film layer.
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申请公布号 |
US2005023691(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20030697438 |
申请日期 |
2003.10.31 |
申请人 |
WATANABE KEI;NAGAMATSU TAKAHITO |
发明人 |
WATANABE KEI;NAGAMATSU TAKAHITO |
分类号 |
H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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