HIGH VOLTAGE TRANSISTOR WITH INVERSE DRIFT REGION IN CHANNEL REGION FOR MINIMIZING LEAKAGE CURRENT

摘要

PURPOSE: A high voltage transistor is provided to minimize leakage current of the transistor by forming an inverse drift region in a channel region. CONSTITUTION: A gate insulating layer(106) and a gate electrode(108) are sequentially formed on a well(100) of a substrate. A drift region(102) is formed in the well spaced apart from each other to align the gate electrode. A source/drain region(112) is formed in the drift region. An inverse drift region(104) is formed in the well and between the drift regions.