发明名称 |
Selective etching of carbon-doped low-k dielectrics |
摘要 |
<p>The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and/or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier/liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 ANGSTROM /min. <IMAGE></p> |
申请公布号 |
EP1503405(A2) |
申请公布日期 |
2005.02.02 |
申请号 |
EP20040018095 |
申请日期 |
2004.07.30 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KIM, YUNSANG;SHIN, NEUNGHO;CHAE, HEEYEOP;CHIU, JOEY;YE, YAN;TIAN, FANG;ZHAO, XIAOYE |
分类号 |
H01L21/3065;H01L21/311;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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