发明名称 |
Method of fabrication of a bipolar transistor |
摘要 |
<p>A bipolar transistor (10) includes a collector region (13), a base region (14) in the collector region (13), and an emitter region (20) in the base region (14). A portion (18) of an electrical conductor (16) is located over a base width (23) of the bipolar transistor (10). The emitter region (20) is self-aligned to the portion (18) of the electrical conductor (16) and is preferably diffused into the base region (14) in order to decrease the base width (23) without relying on extremely precise alignment between base region (14) and the portion (18) of the electrical conductor (16). The portion (18) of the electrical conductor (16) is used to deplete a portion of the base width (23) of the bipolar transistor (10).</p> |
申请公布号 |
EP0805497(B1) |
申请公布日期 |
2005.01.26 |
申请号 |
EP19970106234 |
申请日期 |
1997.04.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
TSOI, HAK YAM |
分类号 |
H01L29/73;H01L21/331;H01L21/8222;H01L21/8248;H01L21/8249;H01L27/06;H01L29/06;H01L29/40;H01L29/732;H01L29/735;H01L29/78;(IPC1-7):H01L29/735 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|