| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem which arises when the base region is shallowed and the base width WB is narrowed for increasing the switching speed of a multibase structure bipolar transistor, that V<SB>CE (sat)</SB>increases due to a reduction in the base curvature which occurs when the collector region concentration level is lowered for the conservation of the withstand voltage. SOLUTION: A first base region which is deep is formed in a multi-island pattern for sustaining the withstand voltage, and a second base region which is shallow is formed for increasing the switching speed. The islands of the first base region and mesh-type emitter regions are provided alternately. In this way, the withstand voltage is sustained and the switching speed is increased. A buried layer is provided under the emitter regions, and this reduces V<SB>CE (sat)</SB>. COPYRIGHT: (C)2005,JPO&NCIPI
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