发明名称 |
Method and apparatus for wall film monitoring |
摘要 |
A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.
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申请公布号 |
US2004232920(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040493138 |
申请日期 |
2004.07.09 |
申请人 |
STRANG ERIC J;PARSONS RICHARD |
发明人 |
STRANG ERIC J;PARSONS RICHARD |
分类号 |
G01B15/02;H01J37/32;H01L21/00;(IPC1-7):G01B9/02 |
主分类号 |
G01B15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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