发明名称 Methods of manufacturing integrated circuit devices having contact holes using multiple insulating layers
摘要 The present invention provides methods of forming contact holes and integrated circuit devices having the same. A conductive plug is formed on a substrate. A first insulating layer is formed on the conductive plug and a second insulating layer is formed on the first insulating layer. The second insulating layer is etched to expose at least a portion of the first insulating layer and the first insulating layer is etched to expose at least a portion of the conductive plug.
申请公布号 US2004224454(A1) 申请公布日期 2004.11.11
申请号 US20040864277 申请日期 2004.06.09
申请人 JIN BEOM-JUN;KIM YOUNG-PIL 发明人 JIN BEOM-JUN;KIM YOUNG-PIL
分类号 H01L21/28;H01L21/02;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823 主分类号 H01L21/28
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