| 摘要 |
PROBLEM TO BE SOLVED: To provide an Al taper dry etching method for Al used as a wiring material of a thin film device such as a liquid crystal display. SOLUTION: The Al taper dry etching method, which is based on resist backstep sequence method for obtaining a small Al taper angle, consists of a step of forming a resist pattern having the small resist taper angle corresponding to a desired small Al taper angle on Al or an Al alloy, and a step of performing anisotropic dry etching on Al or Al alloy having the resist pattern. COPYRIGHT: (C)2005,JPO&NCIPI
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