SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME; INTEGRATED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME; IMAGE DISPLAY AND METHOD FOR MANUFACTURING SAME; AND ILLUMINATING DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

An n-type GaN layer is grown on a sapphire substrate, and an SiN film or the like is formed thereon as a growth mask. An n-type GaN layer in a shape of a hexagonal pyramid spire is selectively grown over the n-type GaN layer located under an opening portion of the growth mask. This spire-shaped n-type GaN layer is composed of a plurality of crystal planes which are inclined to the major surface of the sapphire substrate at different inclination angles, thereby forming a projection as a whole. An active layer and a p-type GaN layer are sequentially formed on this n-type GaN layer, thereby forming a light-emitting structure. Then, a p-side electrode and an n-side electrode are formed.