发明名称 |
Semiconductor memory device and data write method |
摘要 |
A semiconductor memory device including a plurality of memory cells is provided. One of the plurality of memory cells includes a variable resistor having a resistance value thereof reversibly changed in accordance with a voltage applied thereto, and a transistor connected to the variable resistor.
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申请公布号 |
US2004174739(A1) |
申请公布日期 |
2004.09.09 |
申请号 |
US20030728176 |
申请日期 |
2003.12.03 |
申请人 |
MORIMOTO HIDENORI;INOUE KOJI |
发明人 |
MORIMOTO HIDENORI;INOUE KOJI |
分类号 |
G11C16/00;G11C11/56;G11C13/00;G11C16/02;G11C16/10;G11C16/34;(IPC1-7):G11C11/00 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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