发明名称 Semiconductor memory device and data write method
摘要 A semiconductor memory device including a plurality of memory cells is provided. One of the plurality of memory cells includes a variable resistor having a resistance value thereof reversibly changed in accordance with a voltage applied thereto, and a transistor connected to the variable resistor.
申请公布号 US2004174739(A1) 申请公布日期 2004.09.09
申请号 US20030728176 申请日期 2003.12.03
申请人 MORIMOTO HIDENORI;INOUE KOJI 发明人 MORIMOTO HIDENORI;INOUE KOJI
分类号 G11C16/00;G11C11/56;G11C13/00;G11C16/02;G11C16/10;G11C16/34;(IPC1-7):G11C11/00 主分类号 G11C16/00
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