发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened. |
申请公布号 |
US2004152316(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030704628 |
申请日期 |
2003.11.12 |
申请人 |
ONO TAKATOSHI;MIZUNO NAOHITO;TATEYAMA YOSHIKUNI;HIRANO TOMOYUKI |
发明人 |
ONO TAKATOSHI;MIZUNO NAOHITO;TATEYAMA YOSHIKUNI;HIRANO TOMOYUKI |
分类号 |
B24B49/16;B24B37/013;B24B37/04;C09G1/02;H01L21/304;H01L21/306;H01L21/3105;H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
B24B49/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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