| 摘要 |
PROBLEM TO BE SOLVED: To solve problems that the resistance is increased, and the infrared ray reflectivity is degraded in a method for providing a barrier layer or mixing precious metal in an Ag layer, or it takes time in film deposition of metal nitrides at high cost in a method for changing a metal oxide layer into a metal nitride layer in a low resistant film with an Ag layer and a metal oxide laminated thereon. SOLUTION: A nitrogen-containing titanium oxide film of the thickness of 10-100 nm is deposited on both sides or one side of an Ag layer. The nitrogen-containing titanium oxide film contains 3-50 atom % nitrogen, or may contain a metal different from titanium of≤10 wt% to titanium. The nitrogen-containing titanium oxide film is deposited by a sputtering method using a gas atmosphere consisting of, by volume, 3-70% argon gas, 5-30% oxygen gas, and 15-90% nitrogen gas. COPYRIGHT: (C)2004,JPO&NCIPI
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