| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent dopant trapping by forming a cobalt silicide layer having micro grains and to prevent deterioration of device characteristics. CONSTITUTION: A plurality of gates are formed on a semiconductor substrate(11). A junction region(15) is formed at both sides of each gate in the substrate. An amorphous layer is formed on the gate and junction region by carrying out an amorphous ion implantation. A cobalt layer(18) and a buffer layer(19) are sequentially formed on the entire surface of the resultant structure. A cobalt monosilicide layer(20) is formed on the gate and junction region by carrying out the first RTP(Rapid Thermal Processing). The remaining cobalt layer and the buffer layer are removed from the resultant structure. A cobalt disilicide layer is formed on the gate and junction region by carrying out the second RTP.
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