| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an excellent gallium nitride-based solid solution thin film, orientated on a substrate, with superior planarity, and small change in composition. <P>SOLUTION: In the manufacturing method of the gallium nitride-based solid solution thin film, the substrate 30 and the target 20 of the gallium nitride-based solid solution are accommodated in a chamber 10, the temperature in the chamber is set to an atmosphere of 700 °C or less, a target 10 is irradiated with sputter ion beams from an ion source 13 for sputtering installed in the chamber 10, the substrate 30 is irradiated with assist ion beams from an ion source 15 for assisting installed in the chamber 10, and the gallium nitride-based solid solution thin film is formed on the substrate 30. The ion beam assisting method is applied, thus manufacturing the gallium nitride-based solid solution thin film having orientation properties, superior planarity, and a small amount of change in composition. <P>COPYRIGHT: (C)2004,JPO |
