发明名称 |
Variable level memory |
摘要 |
There exists a tradeoff between the fidelity of data storage and the number of bits stored in a memory cell. The number of bits may be increased per cell when fidelity is less important. The number of bits per cell may be decreased when fidelity is more important. A memory, in some embodiments, may change between storage modes on a cell by cell basis.
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申请公布号 |
US2004057355(A1) |
申请公布日期 |
2004.03.25 |
申请号 |
US20030666988 |
申请日期 |
2003.09.18 |
申请人 |
RUDELIC JOHN C.;FACKENTHAL RICHARD E. |
发明人 |
RUDELIC JOHN C.;FACKENTHAL RICHARD E. |
分类号 |
G11C11/56;(IPC1-7):G11B5/09 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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