METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of preventing the void and crack of the isolation layer for improving the reliability of the process and the electrical characteristics of the device. CONSTITUTION: After sequentially forming a pad oxide layer and a pad nitride layer at the upper portion of a semiconductor substrate(100), a trench is formed at the resultant structure. An oxide layer is formed at the bottom and lateral portion of the trench. A hydrogen ion implantation is carried out at the resultant structure. A heat treatment is carried out at the resultant structure for coupling the dangling bond of the oxide layer with hydrogen ions. An insulating layer(105) is deposited on the entire surface of the resultant structure by carrying out an APCVD(Atmospheric Pressure Chemical Vapor Deposition). Then, an isolation layer(110) is formed by selectively etching the resultant structure.