发明名称 |
METHOD FOR FORMING THIN FILM LAYERS BY SIMULTANEOUS DOPING AND SINTERING |
摘要 |
The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between the dopant material and the surface layer. The heating step is performed simultaneously with at least part of the doping step. The doping step may utilize plasma doping of the thin surface layer. In one embodiment, the doping step includes plasma doping of a silicon oxide layer with nitrogen ions. The heating step may io utilize thermal conduction or heating with radiation, such as heating with optical energy. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less. |
申请公布号 |
WO03079405(A3) |
申请公布日期 |
2003.12.18 |
申请号 |
WO2003US06840 |
申请日期 |
2003.03.06 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
DOWNEY, DANIEL, F. |
分类号 |
H01L21/265;C23C8/80;C23C10/02;C23C10/60;C23C12/02;C23C14/48;C23C14/58;C23C16/56;H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|