发明名称
摘要 In a solid-state imaging device, power consumption is reduced in an output section of a charge transfer device. Control transistors T<SUB>S1</SUB>, T<SUB>S2</SUB>, T<SUB>S3 </SUB>are provided in a source follower amplification circuit constituting an output amplifier of a CCD image sensor. The control transistor is switched on and off by switching a gate voltage in accordance with the operation state of the charge transfer device. When the imaging device is in a standby mode, the control transistor is turned off to suspend operation of the source follower amplification circuit.
申请公布号 KR100411212(B1) 申请公布日期 2003.12.18
申请号 KR20010073725 申请日期 2001.11.26
申请人 发明人
分类号 H01L29/762;H04N5/335;H01L21/339;H04N5/369;H04N5/372;H04N5/374;H04N5/378 主分类号 H01L29/762
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