发明名称 GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER AND IMAGE ALIGNER
摘要 PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor laser (GaN-based LD) and an image aligner which has a reduced emission ratio of EL light and is capable of providing a high-quality image with a superior sharpness in the case that a silver salt photosensitive material is exposed. SOLUTION: In order to obtain a high visual-quality image with a superior sharpness using a silver salt photosensitive material, a ratio of EL optical output power to the optical output of the GaN-based LD needs to be 20% or lower. This requirement is satisfied when a resonator length L is 1.0 mm or shorter when a width of a waveguide is 3μm, let the light intensity on a photographic paper be about 0.05 mW and a thickness of the waveguide be 3 nm, that is, a product (W1 L) of the waveguide width W1 and the resonator length L should be 0.003 mm<SP>2</SP>or below. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003258383(A) 申请公布日期 2003.09.12
申请号 JP20020339877 申请日期 2002.11.22
申请人 FUJI PHOTO FILM CO LTD 发明人 MATSUMOTO KENJI;HAYAKAWA TOSHIRO
分类号 G03C5/08;B41J2/45;H01S5/10;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01S5/323 主分类号 G03C5/08
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