Production of trenches in common substrate comprises insulation trenches in the substrate, applying protective layer on the substrate, removing the protective layer and deepening an insulation trench in regions of an exposed base

摘要

Production of a first insulation trench (1) having a first trench depth and a second insulation trench (2) having a second trench depth larger than the first in a common substrate (3) comprises forming the insulation trenches in the substrate having the first trench depth, applying a protective layer on the substrate, in which the first insulation trench is completely filled with the material of the protective layer, removing the protective layer so that a base surface of the second insulation trench is exposed, and deepening the second insulation trench in regions of the exposed base surface up to the second trench depth. Preferred Features: The insulation trenches are produced using a common mask layer. The material of the protective layer acts as insulation medium for the first insulation trench. The protective layer contains a silicon oxide.