| 摘要 |
PROBLEM TO BE SOLVED: To reduce the power consumption of a ferroelectric memory which includes a ferroelectric capacitor as a storage medium and to reduce noise superposition on a bit line by making the bit line short. SOLUTION: A memory is equipped with a ferroelectric capacitor FC constituted by arraying diffusion layers SD and DD of a memory cell transistor TR at right angles to the bit line BL and making the side orthogonal to the bit line BL longer than the side parallel to the bit line BL; and a memory cell and the bit line BL which are adjacent in a direction perpendicular to the bit line BL are shared and a memory cell and the bit line BL which are adjacent in a direction parallel to the bit line BL and a common word line WL are used. COPYRIGHT: (C)2003,JPO
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