| 摘要 |
<p>A mask allowing an alignment of TTR method and a complementary division and having a high strength. A method for making the mask. A method for making semiconductor devices having high pattern accuracy. A stencil mask having, in four small regions (A-D) on a membrane, stripe beams (grids) (4) formed by etching a silicon wafer, wherein the stripes are symmetrically arranged about the center point of the membrane, and any one of the grids is connected to another grid or the silicon wafer around the periphery of the membrane (the support frame). A method for making the stencil mask. A method for making semiconductor devices by use of the stencil mask.</p> |
