| 摘要 |
A bipolar transistor and a method for manufacturing the bipolar transistor are provided. The bipolar transistor includes a collector region including a semiconductor substrate doped with a first conductive dopant, an intrinsic base region low-density doped with a second conductive dopant on the semiconductor substrate, the second conductive dopant being contrary to the first conductive dopant, an extrinsic base region high-density doped with the second conductive dopant on a first portion of the upper surface of the intrinsic base region and formed in a single well with at least two branched lower terminals, an emitter region doped with the first conductive dopant on a second portion of the upper surface of the intrinsic base region, the second portion spaced from the first portion by a designated interval, a collector electrode formed on the lower surface of the semiconductor substrate, an emitter electrode formed on the upper surface of the emitter region, and a base electrode formed on the upper surface of the extrinsic base region.
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