METHOD FOR FORMING PHOTORESIST PATTERN

摘要

PURPOSE: A method for forming a photoresist pattern is provided to be capable of preventing the damage of a photoresist layer for improving the shape of the photoresist pattern by removing residual acid existing at the surface of the photoresist layer using an electron-beam curing process after carrying out a PEB(Post Expose Bake) process. CONSTITUTION: A photoresist layer(22) formed on a wafer(21), is selectively exposed. Non-water-soluble material of the exposed region of the photoresist layer(22) is transformed into water-soluble material by carrying out a PEB process. Residual acid(24) existing at the surface of the non-exposed region of the photoresist layer, is removed by carrying out an electron-beam curing process. A photoresist pattern is formed by removing the water-soluble material portion of the photoresist layer by carrying out a developing process.