PHOTORESIST MONOMER, PHOTORESIST COPOLYMER, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a photoresist monomer for preventing the acid generated by an exposed part by an exposing process in a photolithography step from migrating into an unexposed part, and further to provide a copolymer of the monomer and a photoresist composition containing the copolymer.

SOLUTION: An ultrafine pattern is formed by adding a copolymer of a compound having at least one or more copolymerizable carbon-carbon double bonds, and containing a repeating unit represented by formula (1) to a photoresist composition. As a result, the roughness of a line edge part (LER) and slope are improved. Not only the shape of the pattern but also adhesive strength to a substrate are improved by removing top loss.

COPYRIGHT: (C)2003,JPO