| 摘要 |
FIELD: manufacture of light-emitting structures around quantum points for infrared lasers operating at room temperature. SUBSTANCE: method used for manufacturing light- emitting structures around quantum points from A3B5 materials and compounds produced on their base includes sequential growth of molecular-beam GaAs epitaxial buffer layer on GaAs substrate, AlGaAs base emitter layer, GaAs waveguide layer incorporating quantum-point base active area formed by sequential evaporation of InAs layer, 0.6-0.9 nm thick at a rate of its growth 0.01-0.03 nm/s, with substrate temperature of 460-520 C, InGaAs layer having chemical composition of 10-35% with respect to indium at arsenic-to-indium flow ratio of 1.5-3.0, and covering GaAs layer, as well as upper AlGaAs base emitter layer and GaAs contact layer. Lower emitter layer is produced in light-emitting structure from alternating AlGaAs and GaAs layers. Light-emitting structures produced by this method are radiating at 1.3 mcm wavelength and incorporate provision for. EFFECT: enhanced optical gain, minimized internal loss and short-wave bounce of radiation wavelength. 16 cl, 11 dwg, 4 tbl
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